advanced power n-channel enhancement mode electronics corp. power mosfet capable of 2.5v gate drive bv dss 30v simple drive requirement r ds(on) 5.5m so-8 compatible i d 80a low on-resistance rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data & specifications subject to change without notice total power dissipation 56.8 1 storage temperature range operating junction temperature range -55 to 150 -55 to 150 total power dissipation 28.8 thermal data parameter 201003031 gate-source voltage + 12 continuous drain current 3 , v gs @ 4.5v 23.6 continuous drain current (chip), v gs @ 4.5v continuous drain current 3 19 pulsed drain current 1 300 parameter rating drain-source voltage 30 AP9410GMT-HF 5 halogen-free product 80 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the pmpak ? 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink. s s s g pmpak ? 5x6 d d d d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =20a - - 5 m v gs =4.5v, i d =20a - - 5.5 m v gs =2.5v, i d =20a - - 8 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =20a - 100 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =20a - 28 45 nc q gs gate-source charge v ds =15v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 12 - nc t d(on) turn-on delay time 2 v ds =15v - 12 - ns t r rise time i d =1a - 15 - ns t d(off) turn-off delay time r g =3.3 -38- ns t f fall time v gs =5v - 25 - ns c iss input capacitance v gs =0v - 1960 3130 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 230 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 39 - ns q rr reverse recovery charge di/dt=100a/s - 41 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test 4.starting t j =25 o c , v dd =20v , l=0.1mh , r g =25 , i as =24a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec AP9410GMT-HF r ds(on) static drain-source on-resistance 2
a p9410gmt-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 5.0v 4.5v 3.5v 2.5v v g =2.0v 0 40 80 120 160 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v 4.5v 3.5v 2.5v v g = 2.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =4.5v 0 10 20 30 40 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2 4 6 8 10 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
ap9410gmt-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v v ds =18v v ds =24v 0 800 1600 2400 3200 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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